symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 30 40 59 75 r q jl 16 24 repetitive avalanche energy 0.3mh b mj 135 avalanche current b a 30 pulsed drain current b 70 a t a =70c 11 continuous drain current af t a =25c i dsm 14 maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w 40 c/w absolute maximum ratings t a =25c unless otherwise noted v v 20 gate-source voltage drain-source voltage maximum junction-to-ambient a steady-state maximum units parameter junction and storage temperature range c -55 to 150 3.1 w t a =70c 2.0 power dissipation t a =25c p d AO4480 40v n-channel mosfet v ds (v) = 40v i d = 14a (v gs = 10v) r ds(on) < 11.5m w (v gs = 10v) r ds(on) < 15.5m w (v gs = 4.5v) esd rating: 4kv hbm the AO4480 uses advanced trench technology to provide excellent r ds(on) , low gate charge. it is esd protected. this device is suitable for use as a low side switch in smps and general purpose applications. g d s general description features www.freescale.net.cn 1 / 4
symbol min typ max units bv dss 40 v 1 t j =55c 5 i gss 100 m a v gs(th) 1 2 3 v i d(on) 70 a 9 11.5 t j =125c 13 12 15.5 m w g fs 50 s v sd 0.7 1 v i s 4 a c iss 1600 1920 pf c oss 320 pf c rss 100 pf r g 3.4 w q g (10v) 22 nc q g (4.5v) 10.5 nc q gs 4.2 nc q gd 4.8 nc t d(on) 3.5 ns t r 6 ns t d(off) 13.2 ns t f 3.5 ns t rr 31 ns q rr 33 nc body diode reverse recovery time body diode reverse recovery charge i f =14a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =250ua, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =14a reverse transfer capacitance i f =14a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss ua gate threshold voltage v ds =v gs i d =250 m a v ds =32v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage maximum body-diode continuous current input capacitance output capacitance dynamic parameters m w v gs =4.5v, i d =5a i s =1a,v gs =0v v ds =5v, i d =14a turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =1.5 w , r gen =3 w turn-off fall time turn-on delaytime gate drain charge v gs =0v, v ds =20v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =20v, i d =14a a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s junction to ambient thermal resistance rating. rev2: nov. 2010 AO4480 40v n-channel mosfet www.freescale.net.cn 2 / 4
typical electrical and thermal characteristics 500 150 60 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 5 5.5 v gs (volts) figure 2: transfer characteristics i d (a) 6 8 10 12 14 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =4.5v i d =5a v gs =10v i d =14a 5 10 15 20 25 30 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =14a 25c 125c 0 20 40 60 80 100 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) v gs =3v 4v 10v 5v v gs =3.5v -40c -40c 25c 125c AO4480 40v n-channel mosfet www.freescale.net.cn 3 / 4
typical electrical and thermal characteristics 500 150 60 0 2 4 6 8 10 0 4 8 12 16 20 24 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 400 800 1200 1600 2000 2400 0 5 10 15 20 25 30 35 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q q q q ja normalized transient thermal resistance c oss c rss v ds =20v i d =14a single pulse t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c tc=25c d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms 10s dc r ds(on) limited t j(max) =150c t a =25c 100 m s 100ms 1s AO4480 40v n-channel mosfet www.freescale.net.cn 4 / 4
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